Plessey logoUK-based Plessey is a design and manufacturing company focused on GaN-on-Silicon LEDs for various applications, including displays, sensors and lighting.

Plessey developed unique monolithic micro-LED process technology that can be used to produce Micro-LED displays without a pick-and-place stage. The company offers its technology for licensing and also intends to bring its own monolithic Quanta-Brite microLED based display to market by H1 2018.

Plessey develops two generations of micro-LED displays. The first-gen Quanta-Brite are either LCoS or DMR display that are lit by an array of micro-LEDs, which Plessey says provide a more efficient and uniform display compared to current larger-LED lit displays. The second-generation Quanta-Ray is a real direct-emission micro-LED based micro-display.

Click here for an explanation of Plessey's micro-LED technologies.

Company Address: 
Tamerton Road
Roborough
Plymouth
PL6 7BQ
United Kingdom



The latest Plessey news:

Plessey signs deal with Facebook to dedicate all of its MicroLED operations to support Facebook's AR project

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced a partnership with Facebook - in fact Plessey will dedicated all of its manufacturing operations to support Facebook with its own product development.

 Plessey 0.3'' multi-color segmented microdisplay (CES 2020)

Plesssey says that its displays will be used to support Facebook's prototypes, and the company will develop new microLED technologies to future AR/VR applications.

Plessey developed passive-matrix monochrome microLED microdisplays

MicroLED microdisplay developer Plessey Semiconductor announced that it has developed new passive-matrix monochrome microLED microdisplays. Plessey says it can customize the resolution and color of its PM displays to the customer requirements.

Plessey passive-matrix monochrome microLED microdisplay prototype

Plessey demonstrated its first such PM microdisplays with the 48x36 blue panel you see above. The company says it plans to introduce 384x128 monochrome and 128x128 RGB passive matrix microdisplays by the end of 2020.

Plessey and Compound Photonics produce first microLED display modules

In October 2019 MicroLED microdisplay developer Plessey Semiconductor announced a partnership with Compound Photonics to co-develop microLED display modules. The two companies announced today that the first fully addressable microLED display module was produced and tested.

Plessey and Compound Photonics 0.26'' microLED display module photo

Plessey says that this first functioning microLED prototype validates the successful bonding of Plessey’s GaN-on-Si microLED array wafer to CP's high-performance 3.015 micron pixel 1080p backplane wafer. The module that was produced (shown above) is a 0.26" FHD monochrome native-green display.

Plessey and WaveOptics to co-develop a microLED optical module for next-generation smart glasses

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced a new partnership with waveguide designer WaveOptics to develop new optical modules for next-generation smart glasses.

Plessey native GaN-on-Si green micro LEDs photo

The module will incorporate Plessey's high brightness green Full-HD microLED displays with WaveOptics' Katana waveguide technology and projector design. Plessey says that this module will be the smallest and lowest mass AR display module available on the market.

Plessey demonstrated its latest microLED displays and technologies at CES 2020

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor demonstrated several new microLED technologies at CES 2020. First up we have a Head Up Display (HUD) for automotive applications, that is based on a 0.7" blue monochrome MicroLED display:

Plessey 0.7'' blue FHD automotive microLED HUD (CES 2020)

This same display was demonstrated at SID DisplayWeek 2019, and uses JDC's silicon backplane. The next display is a native red InGaN microLED. This is the first time this display was demonstrated:

Plessey develops the world's first InGaN on Silicon red LED

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has successfully developed the world’s first GaN on Silicon-based Red LED.

Plessey native red InGaN LED, on silicon photos

Red LEDs are typically based on AlInGaP materia, or are color-converted from blue LEDs. These red LEDs limit the efficiency and the ability to create ultra-fine pitch sub pixels. Plessey says that InGaN red LEDs will also offer lower manufacturing costs, scalability to larger 200 mm or 300 mm wafers and better hot/cold factor over incumbent AlInGaP-based Red.

Plessey and Compound Photonics to co-develop microLED microdisplays

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has entered into a partnership with microdisplay system developer Compound Photonics to co-develop a Full-HD (1920x1080) 0.26-inch microLED display solution. The two companies expect to start offering samples in mid-year 2020 (not clear if these will be monochrome or full-color).

Plessey and Compound photonics, blue array microLED microdisplay photo

For this display system, Plessey will bond its micro-LED array wafer on Compound Photonics' backplane silicon wafer. The display module itself will be based on Compound Photonics’ NOVA digital drive architecture with MIPI input.

Plessey developed a process to deposit native green and blue microLEDs on the same wafer

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it managed to deposit native blue and green microLEDs on the same wafer. Plessey’s new patented process forms microLEDs that exhibit high current density operation and long operational lifetime.

Plessey native green and blue microLEDs wafer photo

Plessey said that to achieve this important milestone they had to overcome several challenges - including a magnesium memory effect, diffusion from the p-type cladding of the lower junction into the upper junction and the requirement for the precise tuning of the thermal budget during the growth of the second junction to prevent indium phase separation in the blue active region.

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