UK-based Plessey is a design and manufacturing company focused on GaN-on-Silicon LEDs for various applications, including displays, sensors and lighting.
Plessey developed unique monolithic micro-LED process technology that can be used to produce Micro-LED displays without a pick-and-place stage. The company offers its technology for licensing and also intends to bring its own monolithic Quanta-Brite microLED based display to market by H1 2018.
Plessey develops two generations of micro-LED displays. The first-gen Quanta-Brite are either LCoS or DMR display that are lit by an array of micro-LEDs, which Plessey says provide a more efficient and uniform display compared to current larger-LED lit displays. The second-generation Quanta-Ray is a real direct-emission micro-LED based micro-display.
The latest Plessey news:
UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has entered into a partnership with microdisplay system developer Compound Photonics to co-develop a Full-HD (1920x1080) 0.26-inch microLED display solution. The two companies expect to start offering samples in mid-year 2020 (not clear if these will be monochrome or full-color).
For this display system, Plessey will bond its micro-LED array wafer on Compound Photonics' backplane silicon wafer. The display module itself will be based on Compound Photonics’ NOVA digital drive architecture with MIPI input.
UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it managed to deposit native blue and green microLEDs on the same wafer. Plessey’s new patented process forms microLEDs that exhibit high current density operation and long operational lifetime.
Plessey said that to achieve this important milestone they had to overcome several challenges - including a magnesium memory effect, diffusion from the p-type cladding of the lower junction into the upper junction and the requirement for the precise tuning of the thermal budget during the growth of the second junction to prevent indium phase separation in the blue active region.
UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced a new microLED segmented microdisplay platform, which it calls Direct-Drive. Such displays can be used in applications that require high brightness, low power - and a simple display that is not dot-matrix but segmented.
Plessey says that its native green segments can emit 2 million units, and the total input power can be only 250 mW (probably for a monochrome green display, it is not clear). The Direct-Drive displays will be available in a size of less than 5x5 mm, will include a small size rechargeable battery and include Bluetooth, USB, UART, I2C and SDI interfaces/protocols.
UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has developed a 2.5-micron pitch display, improving on its previous 8-micron pitch display it has demonstrated in May 2019 at SID DisplayWeek.
The new display sports a 2000x2000 resolution and is a monochrome blue display. Plessey says that in early 2020 (during CES 2020, in fact) it will demonstrate a full RGB display on one wafer.
In June 2018, UK-based GaN-on-Si MicroLED developer Plessey Semiconductor and AR developer Vuzix announced a partnership to develop advanced Micro-LED display engines for Vuzix waveguide optics to enable next generation AR Smart Glasses by 2019. Today Plessey announced it has entered into a long-term micro-LED supply agreement with Vuzix.
The new agreement will support the development and production of next-generation AR products that utilize Plessey's micro-LED light source. Vuzix say that the agreement includes an exclusive display device design.
In 2018, UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a strategic partnership with Taiwan's s Jasper Display Corp (JDC). Under the partnership, Plessey will use JDC's silicon backplane to drive its monolithic micro-LED displays.
Today JDC and Plessey demonstrated the world's first GaN-on-Silicon monolithic full-HD (1920x1080) microLED bonded display. Plessey says that it has succeeded in wafer level bonding of its GaN-on-Silicon monolithic microLED wafers with JDC’s eSP70 silicon patented backplane technology, resulting in microLED displays that contain addressable LEDs. The pixel pitch of this display is 8 microns and the JDC backplane provides independent 10-bit single color control of each pixel.
UK-based GaN-on-Si MicroLED developer Plessey Semiconductor developed its proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion techniques.
Plessey says that its native Green LEDs are formed inherently using its proprietary GaN-on-Si epitaxial growth process similar to the native Blue LEDs with the principal difference coming in the amount of indium that is incorporated in the quantum well structures of the LED. The native Green emission is orders of magnitude times brighter than color-converted process for micro-LEDs.
UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a partnership with Quantum Dots developer Nanoco. Plessey aims to integrate Nanoco's cadmium-free quantum dots into its micro-LED displays.
Using a quantum-dot coating, Plessey will be able to use only blue micro-LEDs in its microdisplays, and convert the blue light to red and green to create full-color displays (in a similar way to today's QD-enhanced LCD displays). Plessey says that this design will enable it reduce its pixel pitch from 30 µm to just 4 µm, a reduction of 87%. The QD-enhanced micro-LEDs will also have a wide color gamut and will be more energy efficient compared to Plessey's current phosphor-based architecture.