Researchers demonstrate Terbium-doped GaN microLEDs for the first time
Researchers from the University of Osaka and Ritsumeikan University have demonstrated a terbium-doped AlGaN-based LED for the first time. This is exciting as terbium-doped AlGaN can be used to create LEDs that emits red, green and blue colors, which means that a microLED display can use the same material platform with full RGB emission.
The researcher began the process by forming AlGaN-on-sapphire heterostructure in a Taiyo Nippon Sanso SR-200 MOCVD reactor. Devices were fabricated with terbium-doped layers with AlGaN compositions of Al0.36Ga0.64N, Al0.53Ga0.47N, Al0.59Ga0.41N and Al0.62Ga0.38N. This process is scalable to mass production, no more challenging than standard LEDs.




