Plessey - Page 2

In October 2019 MicroLED microdisplay developer Plessey Semiconductor announced a partnership with Compound Photonics to co-develop microLED display modules. The two companies announced today that the first fully addressable microLED display module was produced and tested.

Plessey says that this first functioning microLED prototype validates the successful bonding of Plessey’s GaN-on-Si microLED array wafer to CP's high-performance 3.015 micron pixel 1080p backplane wafer. The module that was produced (shown above) is a 0.26" FHD monochrome native-green display.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced a new partnership with waveguide designer WaveOptics to develop new optical modules for next-generation smart glasses.

The module will incorporate Plessey's high brightness green Full-HD microLED displays with WaveOptics' Katana waveguide technology and projector design. Plessey says that this module will be the smallest and lowest mass AR display module available on the market.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor demonstrated several new microLED technologies at CES 2020. First up we have a Head Up Display (HUD) for automotive applications, that is based on a 0.7" blue monochrome MicroLED display:

This same display was demonstrated at SID DisplayWeek 2019, and uses JDC's silicon backplane. The next display is a native red InGaN microLED. This is the first time this display was demonstrated:

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has successfully developed the world’s first GaN on Silicon-based Red LED.

Red LEDs are typically based on AlInGaP materia, or are color-converted from blue LEDs. These red LEDs limit the efficiency and the ability to create ultra-fine pitch sub pixels. Plessey says that InGaN red LEDs will also offer lower manufacturing costs, scalability to larger 200 mm or 300 mm wafers and better hot/cold factor over incumbent AlInGaP-based Red.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has entered into a partnership with microdisplay system developer Compound Photonics to co-develop a Full-HD (1920x1080) 0.26-inch microLED display solution. The two companies expect to start offering samples in mid-year 2020 (not clear if these will be monochrome or full-color).

For this display system, Plessey will bond its micro-LED array wafer on Compound Photonics' backplane silicon wafer. The display module itself will be based on Compound Photonics’ NOVA digital drive architecture with MIPI input.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it managed to deposit native blue and green microLEDs on the same wafer. Plessey’s new patented process forms microLEDs that exhibit high current density operation and long operational lifetime.

Plessey said that to achieve this important milestone they had to overcome several challenges - including a magnesium memory effect, diffusion from the p-type cladding of the lower junction into the upper junction and the requirement for the precise tuning of the thermal budget during the growth of the second junction to prevent indium phase separation in the blue active region.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced a new microLED segmented microdisplay platform, which it calls Direct-Drive. Such displays can be used in applications that require high brightness, low power - and a simple display that is not dot-matrix but segmented.

Plessey says that its native green segments can emit 2 million units, and the total input power can be only 250 mW (probably for a monochrome green display, it is not clear). The Direct-Drive displays will be available in a size of less than 5x5 mm, will include a small size rechargeable battery and include Bluetooth, USB, UART, I2C and SDI interfaces/protocols.

UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has developed a 2.5-micron pitch display, improving on its previous 8-micron pitch display it has demonstrated in May 2019 at SID DisplayWeek.

The new display sports a 2000x2000 resolution and is a monochrome blue display. Plessey says that in early 2020 (during CES 2020, in fact) it will demonstrate a full RGB display on one wafer.

In June 2018, UK-based GaN-on-Si MicroLED developer Plessey Semiconductor and AR developer Vuzix announced a partnership to develop advanced Micro-LED display engines for Vuzix waveguide optics to enable next generation AR Smart Glasses by 2019. Today Plessey announced it has entered into a long-term micro-LED supply agreement with Vuzix.

The new agreement will support the development and production of next-generation AR products that utilize Plessey's micro-LED light source. Vuzix say that the agreement includes an exclusive display device design.

In 2018, UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a strategic partnership with Taiwan's s Jasper Display Corp (JDC). Under the partnership, Plessey will use JDC's silicon backplane to drive its monolithic micro-LED displays.

Today JDC and Plessey demonstrated the world's first GaN-on-Silicon monolithic full-HD (1920x1080) microLED bonded display. Plessey says that it has succeeded in wafer level bonding of its GaN-on-Silicon monolithic microLED wafers with JDC’s eSP70 silicon patented backplane technology, resulting in microLED displays that contain addressable LEDs. The pixel pitch of this display is 8 microns and the JDC backplane provides independent 10-bit single color control of each pixel.