Plessey - Page 3

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor developed its proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion techniques.

Plessey says that its native Green LEDs are formed inherently using its proprietary GaN-on-Si epitaxial growth process similar to the native Blue LEDs with the principal difference coming in the amount of indium that is incorporated in the quantum well structures of the LED. The native Green emission is orders of magnitude times brighter than color-converted process for micro-LEDs.

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a partnership with Quantum Dots developer Nanoco. Plessey aims to integrate Nanoco's cadmium-free quantum dots into its micro-LED displays.

Using a quantum-dot coating, Plessey will be able to use only blue micro-LEDs in its microdisplays, and convert the blue light to red and green to create full-color displays (in a similar way to today's QD-enhanced LCD displays). Plessey says that this design will enable it reduce its pixel pitch from 30 μm to just 4 μm, a reduction of 87%. The QD-enhanced micro-LEDs will also have a wide color gamut and will be more energy efficient compared to Plessey's current phosphor-based architecture.

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has been named a CES 2019 Innovation Awards Honoree in the Embedded Technologies category for its monolithic microLED displays.

Plessey developed a unique monolithic micro-LED process technology that can be used to produce Micro-LED displays without a pick-and-place stage. Plessey develops two generations of micro-LED displays. The first-gen Quanta-Brite are either LCoS or DMR display that are lit by an array of micro-LEDs, which Plessey says provide a more efficient and uniform display compared to current larger-LED lit displays.

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a collaboration with EV Group (EVG), a wafer bonding and lithography equipment producer. As part of the agreement, Plessey purchased EVG's GEMINI production wafer bonding system to enable bonding and alignment at Plessey’s fabrication facility in Plymouth, UK.

Plessey says that the new system will enable it to bond its GaN-on-Si microLED arrays to the panel’s backplane at a wafer level. Plessey also says that EVG’s patented automated bond alignment system technology is suitable for Plessey’s requirements because it allows face-to-face alignment of the wafers with very high precision which will enable very small pixel sizes.

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has placed an order for Aixtron's AIX G5+ C MOCVD reactor that will expand Plessey's production capacity for gallium nitride on silicon (GaN-on-Si) wafers.

The new Aixtron reactor will be installed in the first quarter of 2019, at Plessey’s fabrication facility located in Plymouth, UK. The AIX G5+ C MOCVD system has two separate chambers, which enables to use either eight 6" wafers or five 8" ones. The system will be an addition to the company’s existing (and smaller) Aixtron MOCVD reactor

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a strategic partnership with Taiwan's Jasper Display Corp (JDC). Under the new partnership, Plessey will use JDC's silicon backplane to drive its monolithic micro-LED displays produced on the company's proprietary GaN-on-Silicon (GaN-on-Si) wafers.

In May 2018 JDC demonstrated its latest JD27E2 8" wafer, and a 0.7" Full-HD monochrome (960x540 color) microLED microdisplay that is said to be the world's brightest at 100,000 nits (JDC later demonstrated a million nits micro display). JDC's backplane allows Plessey to fabricate highly efficient and ultra-bright micro-LEDs displays.

Yesterday we reported that Plessey partnered with AR supplier Vuzix to bring Micro-LED display engine, Quanta-Brite, for next generation AR Smart Glasses - which Vuzix expects to introduce in 2019.

An interesting article at LED Inside explains Plessey Semiconductor's technology. The Quanta-Brite display engine is not a 'true' Micro-LED display - it is an LCoS or DMD (digital mirror) display engine that is lit by a micro-LED array and special optics. Usual LCoS and DMD displays are lit by larger LEDs, and Plessey claims that its micro-LED solution will provide a more efficient and more uniform display.

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has partnered with AR supplier Vuzix to develop advanced Micro-LED display engines for Vuzix waveguide optics to enable next generation AR Smart Glasses. Vuzix expects to introduce the Micro-LED microdisplay based AR glasses in 2019.

Vuzix says that Plessey's Quanta-Brite light engine is highly efficient and bright, and will enable smaller and more efficient AR devices. The Quanta-Brite engine is based on Plessey's advanced and proprietary gallium-nitride-on-silicon (GaN-on-Si) technology, with an integrated monolithic array of RGB pixels with advanced micro-optical elements.

UK-based optical thin-film developer Artemis announced a partnership with Plessey Semiconductor to co-develop HUD displays that use Plessey's GaN-on-Si MicroLEDs and Artemis' thin-film coatings for HUDs.

Plessey recently announced its new licensing platform and also its intentions to bring a monolithic MicroLED display to the market in H1 2018. Plessey demonstrated an HUD prototype powered by its MicroLED display.

UK-based Plessey Semiconductor announced that it aims to be the first to market with a monolithic microLED based display based on GaN-on-Silicon in H1 2018. The company also announced a new licensing program that will enable third parties to license its GaN-on-Silicon microLED IP and expertise.

Plessey says that GaN-on-Silicon is the only technology that can address all the production challenges for MicroLED displays in high volumes. The company's main business will be its licensing platform, but it aims to bring to market its own displays to demonstrates its expertise.