UK-based GaN-on-Si MicroLED developer Plessey Semiconductor developed its proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion techniques.
Plessey says that its native Green LEDs are formed inherently using its proprietary GaN-on-Si epitaxial growth process similar to the native Blue LEDs with the principal difference coming in the amount of indium that is incorporated in the quantum well structures of the LED. The native Green emission is orders of magnitude times brighter than color-converted process for micro-LEDs.
Plessey's new green LEDs feature a wavelength of 530 nm and a full width half maximum wavelength of 31 nm. The company says that the Green emission exhibits outstanding wavelength stability versus current density.
Plessey developed a unique monolithic micro-LED process technology that can be used to produce Micro-LED displays without a pick-and-place stage. Plessey develops two generations of micro-LED displays. The first-gen Quanta-Brite are either LCoS or DMR display that are lit by an array of micro-LEDs, which Plessey says provide a more efficient and uniform display compared to current larger-LED lit displays.
The second-generation Quanta-Ray is a real direct-emission micro-LED based micro-display. It is not clear which technology is under development with JDC. Click here for an explanation of Plessey's micro-LED technologies.