UK-based GaN-On-Si MicroLED microdisplay developer Plessey Semiconductor announced that it has successfully developed the world’s first GaN on Silicon-based Red LED.

Plessey native red InGaN LED, on silicon photos

Red LEDs are typically based on AlInGaP materia, or are color-converted from blue LEDs. These red LEDs limit the efficiency and the ability to create ultra-fine pitch sub pixels. Plessey says that InGaN red LEDs will also offer lower manufacturing costs, scalability to larger 200 mm or 300 mm wafers and better hot/cold factor over incumbent AlInGaP-based Red.

Plessey’s InGaN Red microLEDs have a wavelength of 630 nm at 10 A/cm2, full width at half maximum of 50 nm, hot cold factor over 90% and higher efficiencies over conventional AlInGaP and color converted red LEDs at ultra-fine pixel pitches. Plessey now has the capability to manufacture native blue, green and red InGaN material or tune wavelengths from 400 - 650 nm using its GaN on Silicon platform.

In October 2019 Plessey announced that it managed to deposit native blue and green microLEDs on the same wafer. Plessey also recently announced a new microLED segmented microdisplay platform, which it calls Direct-Drive and also the development of a 2.5-micron pitch MicroLED microdisplay. The company aims to produce a full RGB microLED display by 2020.



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