Aledia orders Veeco's 300mm MOCVD systems for its upcoming MicroLED production fab

Veeco announced that France-based 3D GaN LED developer Aledia has selected the company's Propel 300mm HVM MOCVD system for its microLED production plant. Veeco says that the Propel system, featuring a SEMI-compliant Equipment Front End Module (EFEM) with cassette-to-cassette automation, was chosen due to its highest productivity with the lowest defectivity compared to alternatives.

Veeco Propel GaN MOCVD system photo

Last month Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The company already raised 80 million Euros and its great to see the company already ordering production equipment.

Aledia raised €80 million towards its mass production microLED fab

Last month France-based 3D GaN LED developer Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. Today the company announced that it closed €80 million in funding, out of the planned €120 million Series D investment round.

The lead investor in this round is the Investment Fund Société de Projet Industriel (SPI), a fund managed by Bpifrance. SPI is joined by the majority of the existing strategic investors, including Intel Capital.

Aledia to setup a 140 million Euros GaN-On-Si microLED production line, start making microdisplay by 2022

France-based 3D GaN LED developer Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The plan is to start LED production by 2022 - and by the company will also finalize its microdisplay production process and will start offering microLED microdisplays.

Aledia developed a microLED production process, based on a unique 3D architecture using GaN-on-silicon nanowires (branded as WireLED).

Researchers use graphene to create detachable flexible microLED devices

Researchers from the University of Texas at Dallas developed a new method to create highly flexible microLED chips, that can be folded and twisted. The LEDs are detachable, and can be attached to almost an surface.

Flexible MicroLED devices, University of Texas (September 2020)

The researchers used remote epitaxy, to grow the LED crystals on a sapphire crystal substrate, coated with a one-atom layer of 2D graphene, which prevents the LED to stick to the sapphire substrate.

Epistar's chairman - MicroLEDs to be adopted first by smartwatches, but it will take 3-4 years

Digitimes reports that Epistar's chairman, Lee Biing-jye says that he estimates that the first volume application for microLED displays is going to be in the smartwatch industry - but that will still take 3-4 years to actually materialize. Volume adoption in the TV market will take at least 4-5 years.

Epistar is developing microLED epitaxy and chip technology (in collaboration with AUO) and still has challenges to overcome, mainly in the mass transfer area. The company expects to achieve reliable production capabilities within 2-3 years. Epistar needs also to improve the yield rates for microLED epitaxy and reduce costs for mass transfer processes.

ALLOS and researchers from KAUST to develop high efficiency nitride-based red LEDs on silicon wafers

GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.

ALLOS and KAUST,nitride red LED on Silicon structure

Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS’ GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST’s red LED stack.

ALLOS Semiconductor sells its HPE and RF business, to focus on the microLED market

German-based GaN-on-Si developer ALLOS announced that it has sold its high-power electronics and RF business to AZUR SPACE. ALLOS will now focus its business on the microLED display market.

ALLOS Semiconductors developed its GaN-on-Si epiwafer technology for both high power electronics and Micro LED applications, but the time has come to focus on one market. The company says its 200 and 300 mm epiwafer technology is crucial in meeting the uniformity, crystal quality and manufacturability requirements of the novel Micro LED display applications.

PlayNitride plans to reduce microLED chip prices by 95% within 5 years

PlayNitride says that in order to meet mass production goals, microLED chip prices will have to be reduced drastically. The company aims to reduce the production cost of microLED chips by 95% within five years.

PlayNitride's CEO, Charles Li, says that the main challenge right now is to reduce the cost and size of microLED chips. In addition microLED makers will have to integrate the entire supply chain - from LED wafer production and process to transfer technology, backplane production and display module fabrication. Good technologies are available for all these steps, but integration is now key.