Plessey purchased EVG's production wafer bonding system

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a collaboration with EV Group (EVG), a wafer bonding and lithography equipment producer. As part of the agreement, Plessey purchased EVG's GEMINI production wafer bonding system to enable bonding and alignment at Plessey’s fabrication facility in Plymouth, UK.

Plessey's EVG -Gemini production wafer bonding system photo

Plessey says that the new system will enable it to bond its GaN-on-Si microLED arrays to the panel’s backplane at a wafer level. Plessey also says that EVG’s patented automated bond alignment system technology is suitable for Plessey’s requirements because it allows face-to-face alignment of the wafers with very high precision which will enable very small pixel sizes.

Coherent reports new orders for its Micro-LED laser R&D tools

Laser equipment maker Coherent says that its customer have expressed a "reasonable amount of interest " in its Micro-LED solutions. The company is taking orders for R&D tools, but it says that mass production of Micro-LED displays is "still years away".

Coherent offers several laser-based tools used to produce Micro-LED displays, including Laser Lift-Off equipment (LLO) used to separate micro-LEDs from the sapphire wafer and Laser Induced Forward Transfer (LIFT) used to move micro-LEDs from the donor to substrate.

Plessey placed an order for Aixtron's G5+ C MOCVD tool for GaN-on-silicon growth

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has placed an order for Aixtron's AIX G5+ C MOCVD reactor that will expand Plessey's production capacity for gallium nitride on silicon (GaN-on-Si) wafers.

Aixtron G5+ C MOCVD system photo

The new Aixtron reactor will be installed in the first quarter of 2019, at Plessey’s fabrication facility located in Plymouth, UK. The AIX G5+ C MOCVD system has two separate chambers, which enables to use either eight 6" wafers or five 8" ones. The system will be an addition to the company’s existing (and smaller) Aixtron MOCVD reactor

Aledia selected Veeco's GaN MOCVD system for large-area silicon R&D

France-based 3D GaN LED developer Aledia has selected Veeco Instruments’s Propel GaN metal-organic chemical vapor deposition (MOCVD) system to support its advanced R&D. Aledia aims to scale up its technology for large-area silicon using Veeco's system.

Veeco Propel GaN MOCVD system photo

Veeco's Propel system will enable Aledia to process 6- and 8-in. wafers or 2- to 4-in. wafers in a minibatch mode. Aledia already uses Veeco's K465i MOCVD system.

Nichia: we're developing Micro-LED technologies, but it will take at least 4 years for Micro-LED displays to reach the market

Japanese-based LED maker Nichia says that the company has been developing Micro-LED technologies for several years, and the company can produce micro-LED chips - but the company estimates that it will take at least four years for Micro-LED displays to reach real commercialization.

Nichia is not only developing Micro-LED chips, the company also develops transfer technology and related equipment.

BluGlass to collaborate with a display maker and test its RPCVD production process for Micro-LED production

Australia-based RPCVD developer BluGlass announced that it has entered into a collaboration agreement with a "well-funded" microLED company to investigate the use of its Remote Plasma Chemical Vapor Deposition (RPCVD) production technology to produce RGB MicroLED devices.

p-GaN LED growth using RPCVD (BluGlass)

BluGlass estimates that Micro-LED production will benefit from its low-temperature RPCVD manufacturing solution. The two companies will work together to demonstrate proof of concept of a unique red, green and blue (RGB) microLED display application. BluGlass will be paid for its deposition services and retain all RPCVD related IP rights resulting from the collaboration.

KAIST researchers develop flexible vertical micro-LEDs using an ACF-based transfer process

Researchers from Korea's KAIST developed flexible vertical micro-LEDs (f-VLEDs) using anisotropic conductive film (ACF)-based transfer and interconnection technology.

The researchers developed their own transfer equipment and used it to fabricate a 50x50 array of f-VLEDs using simultaneous transfer and interconnection through the precise alignment of ACF bonding process. The researchers report that the micro-LEDs achieved an optical power density of 30 mW/mm2 - which is three times higher than that of lateral micro LEDs. The LEDs offer improving thermal reliability and lifetime by reducing heat generation within the thin film LEDs.

glō orders an MOCVD tool for Aixtron to deposit GaN nanowire-based Micro-LEDs

Swedish-American GaN nanowire based micro LEDs developer glō ordered an AIX G5+ MOCVD platform from Aixtron to support the company's strategic expansion. The tool will be delivered with a 8x150 mm configuration by the end of 2017.

Aixtron G5+ MOCVD handler photo

glō is commercializing micro-LED products based in its proprietary defect-free GaN nanowires technology. glō says that its technology enable the growth of mLEDs while maintaining the reliability of an inorganic material system.