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GaN-on-Silicon

Plessey developed its process to produce native GaN-on-Si green micro-LEDs

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor developed its proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion techniques.

Plessey native GaN-on-Si green micro LEDs photo

Plessey says that its native Green LEDs are formed inherently using its proprietary GaN-on-Si epitaxial growth process similar to the native Blue LEDs with the principal difference coming in the amount of indium that is incorporated in the quantum well structures of the LED. The native Green emission is orders of magnitude times brighter than color-converted process for micro-LEDs.

Read the full story | 3 comments | Posted: Mar 29, 2019

Aledia orders more Micro-LED production equipment from Veeco

In July 2018, France-based 3D GaN LED developer Aledia announced that it has selected Veeco Instruments’s Propel GaN MOCVD system to support its advanced R&D. Veeco's Propel system enables Aledia to process 6- and 8-inch wafers or 2- to 4-inch wafers in a minibatch mode. Aledia also uses Veeco's R&D K465i MOCVD system.

Veeco Propel GaN MOCVD system photo

Aledia and Veeco now announced that Aledia "expands its portfolio of Veeco equipment to develop and produce 3D micro-LEDs". It is not clear what kind of equipment Aledia ordered - and it also seems that the two companies are collaborating to develop next-generation Micro-LED production equipment.

Read the full story Posted: Mar 24, 2019

Glo demonstrate its LTPS and CMOS MicroLED displays

US and Sweden based Glo has been developing Micro-LED displays on both LTPS and CMOS (microdisplay) backplanes for many years. The company has been rather queit until now (even though the 2017 investment from Google created some buzz).

Glo: MicroLED vs OLED, LTPS demo 2019

Glo has now started to disclose its technology and achievements. At CES 2019, Glo demonstrated two displays. First up is the 1.5-inch smartphone type display you can see in the image above. The 264 PPI 120Hz display is produced on a LTPS backplane and produces 4,000 nits brightness - you can see how it is much brighter compared to the LGD OLED in the Apple Watch next to it (1,000 nits max).

Read the full story Posted: Feb 07, 2019

PlayNitride and Aixtron to collaborate on Micro-LED development

Aixtron and PlayNitride signed a joint-collaboration agreement to accelerate Micro-LED development. Aixtron will deliver an AIX G5+ C MOCVD system to Playnitride, that will be used to produce GaN-based Micro LED devices.

Aixtron says that the G5+ C is an advanced advanced production tool that offers market leading wavelength uniformity to meet the tightened Micro LED market specifications in a batch reactor high-throughput environment. The system allows for the lowest defect and particle level in the industry due to an effective in-situ cleaning technology and the cassette-to-cassette handler which is essential for high yields. The G5+ C MOCVD was recently ordered by Plessey for its own GaN-on-Silicon Micro-LED development and production.

Read the full story Posted: Jan 09, 2019

Plessey purchased EVG's production wafer bonding system

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a collaboration with EV Group (EVG), a wafer bonding and lithography equipment producer. As part of the agreement, Plessey purchased EVG's GEMINI production wafer bonding system to enable bonding and alignment at Plessey’s fabrication facility in Plymouth, UK.

Plessey's EVG -Gemini production wafer bonding system photo

Plessey says that the new system will enable it to bond its GaN-on-Si microLED arrays to the panel’s backplane at a wafer level. Plessey also says that EVG’s patented automated bond alignment system technology is suitable for Plessey’s requirements because it allows face-to-face alignment of the wafers with very high precision which will enable very small pixel sizes.

Read the full story Posted: Nov 12, 2018

ALLOS and Veeco demonstrated the reproducibility of ALLO's GaN-on-Si epiwafer technology for uniform Micro-LED production

In November 2017 Veeco and ALLOS Semiconductors announced that the two companies have completed their micro-LED strategic initiative and demonstrated 200mm GaN-on-Si wafers for blue and green micro-LED production. ALLOS proprietary epitaxy technology was transferred onto Veeco's Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

ALLOS GaN-on-Si wafer photo

Yesterday ALLOS and Veeco announced the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The two companies now demonstrated the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer technology on Veeco’s Propel MOCVD reactor when producing epiwafers for many prominent global consumer electronics companies.

Read the full story Posted: Nov 09, 2018

Plessey placed an order for Aixtron's G5+ C MOCVD tool for GaN-on-silicon growth

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has placed an order for Aixtron's AIX G5+ C MOCVD reactor that will expand Plessey's production capacity for gallium nitride on silicon (GaN-on-Si) wafers.

Aixtron G5+ C MOCVD system photo

The new Aixtron reactor will be installed in the first quarter of 2019, at Plessey’s fabrication facility located in Plymouth, UK. The AIX G5+ C MOCVD system has two separate chambers, which enables to use either eight 6" wafers or five 8" ones. The system will be an addition to the company’s existing (and smaller) Aixtron MOCVD reactor

Read the full story Posted: Sep 20, 2018

Plessey signs a strategic partnership with Jasper Display to use Jasper's backplane on its GaN-on-Silicon wafers

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a strategic partnership with Taiwan's Taiwan's Jasper Display Corp (JDC). Under the new partnership, Plessey will use JDC's silicon backplane to drive its monolithic micro-LED displays produced on the company's proprietary GaN-on-Silicon (GaN-on-Si) wafers.

In May 2018 JDC demonstrated its latest JD27E2 8" wafer, and a 0.7" Full-HD monochrome (960x540 color) microLED microdisplay that is said to be the world's brightest at 100,000 nits (JDC later demonstrated a million nits micro display). JDC's backplane allows Plessey to fabricate highly efficient and ultra-bright micro-LEDs displays.

Read the full story Posted: Sep 14, 2018