Glo demonstrate its LTPS and CMOS MicroLED displays

US and Sweden based Glo has been developing Micro-LED displays on both LTPS and CMOS (microdisplay) backplanes for many years. The company has been rather queit until now (even though the 2017 investment from Google created some buzz).

Glo: MicroLED vs OLED, LTPS demo 2019

Glo has now started to disclose its technology and achievements. At CES 2019, Glo demonstrated two displays. First up is the 1.5-inch smartphone type display you can see in the image above. The 264 PPI 120Hz display is produced on a LTPS backplane and produces 4,000 nits brightness - you can see how it is much brighter compared to the LGD OLED in the Apple Watch next to it (1,000 nits max).

PlayNitride and Aixtron to collaborate on Micro-LED development

Aixtron and PlayNitride signed a joint-collaboration agreement to accelerate Micro-LED development. Aixtron will deliver an AIX G5+ C MOCVD system to Playnitride, that will be used to produce GaN-based Micro LED devices.

Aixtron G5+ C MOCVD system photo

Aixtron says that the G5+ C is an advanced advanced production tool that offers market leading wavelength uniformity to meet the tightened Micro LED market specifications in a batch reactor high-throughput environment. The system allows for the lowest defect and particle level in the industry due to an effective in-situ cleaning technology and the cassette-to-cassette handler which is essential for high yields. The G5+ C MOCVD was recently ordered by Plessey for its own GaN-on-Silicon Micro-LED development and production.

Plessey purchased EVG's production wafer bonding system

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a collaboration with EV Group (EVG), a wafer bonding and lithography equipment producer. As part of the agreement, Plessey purchased EVG's GEMINI production wafer bonding system to enable bonding and alignment at Plessey’s fabrication facility in Plymouth, UK.

Plessey's EVG -Gemini production wafer bonding system photo

Plessey says that the new system will enable it to bond its GaN-on-Si microLED arrays to the panel’s backplane at a wafer level. Plessey also says that EVG’s patented automated bond alignment system technology is suitable for Plessey’s requirements because it allows face-to-face alignment of the wafers with very high precision which will enable very small pixel sizes.

ALLOS and Veeco demonstrated the reproducibility of ALLO's GaN-on-Si epiwafer technology for uniform Micro-LED production

In November 2017 Veeco and ALLOS Semiconductors announced that the two companies have completed their micro-LED strategic initiative and demonstrated 200mm GaN-on-Si wafers for blue and green micro-LED production. ALLOS proprietary epitaxy technology was transferred onto Veeco's Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

ALLOS GaN-on-Si wafer photo

Yesterday ALLOS and Veeco announced the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The two companies now demonstrated the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer technology on Veeco’s Propel MOCVD reactor when producing epiwafers for many prominent global consumer electronics companies.

Plessey placed an order for Aixtron's G5+ C MOCVD tool for GaN-on-silicon growth

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced that it has placed an order for Aixtron's AIX G5+ C MOCVD reactor that will expand Plessey's production capacity for gallium nitride on silicon (GaN-on-Si) wafers.

Aixtron G5+ C MOCVD system photo

The new Aixtron reactor will be installed in the first quarter of 2019, at Plessey’s fabrication facility located in Plymouth, UK. The AIX G5+ C MOCVD system has two separate chambers, which enables to use either eight 6" wafers or five 8" ones. The system will be an addition to the company’s existing (and smaller) Aixtron MOCVD reactor

Plessey signs a strategic partnership with Jasper Display to use Jasper's backplane on its GaN-on-Silicon wafers

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor announced a strategic partnership with Taiwan's Taiwan's Jasper Display Corp (JDC). Under the new partnership, Plessey will use JDC's silicon backplane to drive its monolithic micro-LED displays produced on the company's proprietary GaN-on-Silicon (GaN-on-Si) wafers.

In May 2018 JDC demonstrated its latest JD27E2 8" wafer, and a 0.7" Full-HD monochrome (960x540 color) microLED microdisplay that is said to be the world's brightest at 100,000 nits (JDC later demonstrated a million nits micro display). JDC's backplane allows Plessey to fabricate highly efficient and ultra-bright micro-LEDs displays.

Aledia selected Veeco's GaN MOCVD system for large-area silicon R&D

France-based 3D GaN LED developer Aledia has selected Veeco Instruments’s Propel GaN metal-organic chemical vapor deposition (MOCVD) system to support its advanced R&D. Aledia aims to scale up its technology for large-area silicon using Veeco's system.

Veeco Propel GaN MOCVD system photo

Veeco's Propel system will enable Aledia to process 6- and 8-in. wafers or 2- to 4-in. wafers in a minibatch mode. Aledia already uses Veeco's K465i MOCVD system.

Plessey's Quanta-Brite and Quanta-Ray micro-LED microdisplay technologies explained

Yesterday we reported that Plessey partnered with AR supplier Vuzix to bring Micro-LED display engine, Quanta-Brite, for next generation AR Smart Glasses - which Vuzix expects to introduce in 2019.

An interesting article at LED Inside explains Plessey Semiconductor's technology. The Quanta-Brite display engine is not a 'true' Micro-LED display - it is an LCoS or DMD (digital mirror) display engine that is lit by a micro-LED array and special optics. Usual LCoS and DMD displays are lit by larger LEDs, and Plessey claims that its micro-LED solution will provide a more efficient and more uniform display.

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