GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.
Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOSâ€™ GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUSTâ€™s red LED stack.
ALLOS tells us that while nitride red LEDs offer a relatively poor performance, they could make perfect sense if they enable easier micro-LED display manufacturability, and this is the aim of this new development activity. ALLOS recently announced that it has sold its high-power electronics and RF business to AZUR SPACE. ALLOS will now focus its business on the microLED display market.