KAUST researchers develops highly-efficient GaN and InGaN red microLED devices

Researchers from King Abdullah's University of Science & Technology (KAUST) in Saudi Arabia developed GaN and InGan red microLED devices that are highly efficient.

The researchers managed to increase the efficiency of their previous design by a new chemical treatment that removes damages at the microLED sidewalls (created during the fabrication process) and also retains the high crystal quality at the InGaN and GaN sidewall interfaces.


The chips produced in this research were 47-um long, and the team is now working to increase efficiency further and reduce chip sizes to 20-um or even lower.

Posted: May 12,2021 by Ron Mertens