Ingantec licenses 20 patents from Yale University for nanoporous GaN growth and etching technologies
US-based Ingantec announced that it has licensed a portfolio of patents and pending patents from Yale University, 20 issued patents and filings, covering key innovations in III-nitride optoelectronic devices, methods, and manufacturing processes.

The patents and IP include epitaxial growth and electrochemical etching techniques that utilize nanoporous GaN layers for advanced lattice strain engineering. Ingantec says that these technologies provide novel approaches for controlling material properties in GaN and related semiconductor alloys, with the potential to improve electrical, optical, and structural performance.




