Quantum Dots producer Nanosys acquires microLED display developer glo

Quantum Dots developer Nanosys announced that it acquired 3D Nanowire microLED display developer Glo. The financial details were not disclosed.

Japan Display and glo 1.6-inch microLED prototype photo

Glo has been developing GaN microLED displays on both LTPS and CMOS (microdsiplay) backplane. The company, founded in 2003, has invested (according to Nanosys) over $200 million in its technology - which includes epitaxial LED growth, transfer technology and chip processing.

Aledia produces its first nanowire microLEDs on 300 mm silicon wafers

France-based 3D GaN LED developer Aledia announced that it has produced its first nanowire microLED chips on 300 mm silicon wafers, at the CEA-Leti pilot line. Producing microLEDs on large wafers is more cost effective and will enable integration with smaller-node electronics.

Aledia microLED produced on 300mm silicon at CEA-Leti

Earlier this year Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The company already raised 80 million Euros towards that goal. The new fab will use Veeco's 300 mm MOCVD systems.

A new design boosts the brightness of UV GaN nanowire LEDs five fold

Researchers from the US National Institute of Standards and Technology (NIST) developed new GaN nanowire-based ultraviolet LEDs that are five times as bright as regular LEDs. The new design uses a silicon-doped GaN nanowire core coated with a shell made from magnesium-doped GaN and Aluminum.

Aluminum nanowire GaN UV LED (NIST)

The nanowires are built in a p-i-n structure and the researcher say that adding the Aluminum to the shell of the LED helps confine electrons to the nanowire core by introducing an asymmetry in the electrical current which boost the electroluminescence of the device.

Researchers propose vertically integrated GaN nanowire FETs and InGaN LEDs for future MicroLED displays

Researchers from the Rochester Institute of Technology managed to vertically integrate nanowire gallium nitride (GaN) field-effect transistors (FETs) and indium gallium nitride (InGaN) LEDs. Such technology could be useful for future Micro-LED displays.

Vertically integrated GaN nanowire FETs and InGaN LEDs (Rochester Institute of Technology)The researchers say that this integration could provide to enable smaller structures and more cost-effective processes compared to alternative light emitting architectures - such as high-electron-mobility transistor (HEMT) combined with LEDs.

glō orders an MOCVD tool for Aixtron to deposit GaN nanowire-based Micro-LEDs

Swedish-American GaN nanowire based micro LEDs developer glō ordered an AIX G5+ MOCVD platform from Aixtron to support the company's strategic expansion. The tool will be delivered with a 8x150 mm configuration by the end of 2017.

Aixtron G5+ MOCVD handler photo

glō is commercializing micro-LED products based in its proprietary defect-free GaN nanowires technology. glō says that its technology enable the growth of mLEDs while maintaining the reliability of an inorganic material system.

InZiv - Transforming MicroLED display inspectionInZiv - Transforming MicroLED display inspection