UCSB researchers developed a scalable monolithic transfer process based on selective electrochemical etching combined with wafer bonding
Researchers at UCSB developed a scalable monolithic transfer process that uses selective electrochemical etching of a highly doped GaN sacrificial layer combined with wafer bonding to release and transfer fully fabricated micro-LED arrays onto silicon in a single step.
The researchers report that this breakthrough process eliminates laser lift-off and serial pick-and-place transfer, enabling low-damage, high-throughput heterogeneous integration of microLEDs devices for displays, optical interconnects, and sensing.
