STRATACACHE CEO details the challenges and goals of the company's upcoming US-based microLED display production fab

Global digital signage solution provider STRATACACHE is constructing the first US-based complete display production facility in Eugene, Oregon. The future MicroLED E4 fab is planned to commence production in 2022, and the fab will be a complete microLED production line, from epiwafer (on 300 mm silicon wafers), through transfer process and to final module assembly.

STRATACACHE Eugene E4 MicroLED fab photo

This project is extremely interesting, and we set out to discuss it with STRATACACHE's founder and CEO, Chris Riegel. At STRATACACHE, Chris leads strategic direction, technology development and engineering operations, and the MicroLED fab project seems to be personally spearheaded by him.

Read the full story Posted: Feb 27,2021

STRATACACHE to build the first MicroLED production line in the US, mass production expected by 2023

Global digital signage solution provider STRATACACHE is embarking on a project to construct a microLED display production line in Eugene, Oregon. The company aims to start production in this fab at around 2022-2023, with plans to adopt these microLED displays in its own solutions.

The new factory (E4) will be a complete microLED production line, from epiwafer (on 300 mm silicon wafers), through transfer process and to final module assembly. The company plans to produce a wide range of displays, from tablet-sized panels to large-area displays. Some of these displays will be flexible and transparent as the company sees a market demand for such technologies. The yearly capacity of the E4 is expected to start at a 1 million square meters per year.

Read the full story Posted: Jan 25,2021

Porotech announces the world's first red GaN microLED epiwafer

Cambridge University spin-out Porotech has launched a native red GaN LED epiwafer for microLED applications. The company says this is the industry's first commercial red GaN epiwafer.

Porotech's native red GaN microLED performance chart

Current red LEDs are mostly produced from aluminum indium gallium phosphide (AlInGaP) materials. These materials show a drastic efficiency drop as the LED side decreases (due to their large carrier diffusion lengths and high surface recombination velocity) and in addition a hybrid AlInGaP and GaN RGB device is more difficult to drive. This is why it is beneficial to produce red LEDs from GaN materials.

Read the full story Posted: Nov 25,2020

Aledia orders Veeco's 300mm MOCVD systems for its upcoming MicroLED production fab

Veeco announced that France-based 3D GaN LED developer Aledia has selected the company's Propel 300mm HVM MOCVD system for its microLED production plant. Veeco says that the Propel system, featuring a SEMI-compliant Equipment Front End Module (EFEM) with cassette-to-cassette automation, was chosen due to its highest productivity with the lowest defectivity compared to alternatives.

Veeco Propel GaN MOCVD system photo

Last month Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The company already raised 80 million Euros and its great to see the company already ordering production equipment.

Read the full story Posted: Oct 22,2020

Aledia raised €80 million towards its mass production microLED fab

Last month France-based 3D GaN LED developer Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. Today the company announced that it closed €80 million in funding, out of the planned €120 million Series D investment round.

The lead investor in this round is the Investment Fund Société de Projet Industriel (SPI), a fund managed by Bpifrance. SPI is joined by the majority of the existing strategic investors, including Intel Capital.

Read the full story Posted: Oct 07,2020

Aledia to setup a 140 million Euros GaN-On-Si microLED production line, start making microdisplay by 2022

France-based 3D GaN LED developer Aledia announced that it plans to establish a 140 million euros LED production fab in Champagnier, near Grenoble in France. The plan is to start LED production by 2022 - and by the company will also finalize its microdisplay production process and will start offering microLED microdisplays.

Aledia developed a microLED production process, based on a unique 3D architecture using GaN-on-silicon nanowires (branded as WireLED).

Read the full story Posted: Sep 14,2020

Researchers use graphene to create detachable flexible microLED devices

Researchers from the University of Texas at Dallas developed a new method to create highly flexible microLED chips, that can be folded and twisted. The LEDs are detachable, and can be attached to almost an surface.

Flexible MicroLED devices, University of Texas (September 2020)

The researchers used remote epitaxy, to grow the LED crystals on a sapphire crystal substrate, coated with a one-atom layer of 2D graphene, which prevents the LED to stick to the sapphire substrate.

Read the full story Posted: Sep 01,2020

Epistar's chairman - MicroLEDs to be adopted first by smartwatches, but it will take 3-4 years

Digitimes reports that Epistar's chairman, Lee Biing-jye says that he estimates that the first volume application for microLED displays is going to be in the smartwatch industry - but that will still take 3-4 years to actually materialize. Volume adoption in the TV market will take at least 4-5 years.

Epistar is developing microLED epitaxy and chip technology (in collaboration with AUO) and still has challenges to overcome, mainly in the mass transfer area. The company expects to achieve reliable production capabilities within 2-3 years. Epistar needs also to improve the yield rates for microLED epitaxy and reduce costs for mass transfer processes.

Read the full story Posted: Aug 10,2020

ALLOS and researchers from KAUST to develop high efficiency nitride-based red LEDs on silicon wafers

GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.

ALLOS and KAUST,nitride red LED on Silicon structure

Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS’ GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST’s red LED stack.

Read the full story Posted: Jul 21,2020

ALLOS Semiconductor sells its HPE and RF business, to focus on the microLED market

German-based GaN-on-Si developer ALLOS announced that it has sold its high-power electronics and RF business to AZUR SPACE. ALLOS will now focus its business on the microLED display market.

ALLOS Semiconductors developed its GaN-on-Si epiwafer technology for both high power electronics and Micro LED applications, but the time has come to focus on one market. The company says its 200 and 300 mm epiwafer technology is crucial in meeting the uniformity, crystal quality and manufacturability requirements of the novel Micro LED display applications.

Read the full story Posted: Jul 10,2020