Researchers from Seoul National University (SNU) in collaboration with KAIST, SAIT and the Korea Photonics Institute developed a new method to deposit MicroLEDs on sapphire nano-membranes which enables chip singulation without an etching process. This method can enable higher efficiency MicroLED devices.

MicroLEDs grown on sapphire nano-membranes (SNU)

The researchers say that this method improves the internal quantum efficiency (IQE) of the microLEDs by 44% compared to standard GaN microLEDs produced on regular planar substrates. The microLEDs also featured a reduced dislocation density (by 59.6%). According to their tests, the microLEDs provided 3.3X the photoluminescence compared to regular microLEDs.

In addition to the advantages at the chip (LED) level, the nano-membranes (which are thin, at 100nm) can be broken using mechanical force and so the microLEDs can be easily separated from the substrate and transferred to the final backplane.

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