Researchers from Seoul National University (SNU) in collaboration with KAIST, SAIT and the Korea Photonics Institute developed a new method to deposit MicroLEDs on sapphire nano-membranes which enables chip singulation without an etching process. This method can enable higher efficiency MicroLED devices.
The researchers say that this method improves the internal quantum efficiency (IQE) of the microLEDs by 44% compared to standard GaN microLEDs produced on regular planar substrates. The microLEDs also featured a reduced dislocation density (by 59.6%). According to their tests, the microLEDs provided 3.3X the photoluminescence compared to regular microLEDs.
In addition to the advantages at the chip (LED) level, the nano-membranes (which are thin, at 100nm) can be broken using mechanical force and so the microLEDs can be easily separated from the substrate and transferred to the final backplane.