Researchers develop high-efficiency InGaN red LEDs by optimizing the V-Pit

Researchers from China's Xiamen University, Singapore's Nanyang Technological University, Xiamen University Malaysia , Birkenau University (Turkey), and Lattice Optoelectronics have developed a new red InGaN LED device that achieved high efficiency - 11.78% EQE, and 1.1% EQE at microLED sizes (10 micron).

To achieve this high efficiency, the researchers have optimized the device V-pit to promote the effectiveness of three-dimensional current pathways and facilitate localized electric field redistribution. The researchers explain that this improvement enhances hole injection while suppressing nonradiative recombination, this work contributes to the microstructure design in InGaN-based red LEDs.