Researchers combine dry/wet etching porcess with polymeric encapsulation to reduce microLED sidewall defects

Researchers from the University of Waterloo have demonstrated how a combined dry/wet etching process with polymeric encapsulation to construct InGaN-based microLEDs that show negligible degradation due to sidewall effects for devices having diameters as small as 6 µm.

The researchers report that the microLEDs exhibit low surface recombination velocities ( <10 cm s⁻¹) and high wall plug efficiencies of 20.3% at a current density of 2.5A cm^-2.