Researchers develop a new technique to color-tune monolithic GaN LEDs

Researchers from Lehigh University, West Chester University, Osaka University and the University of Amsterdam developed a new technique to color-tune Gallium-Nitride (GaN) LEDs.

A tunable GaN:eu LED photo

The new technique is based on Atomic Emission Manipulation under Current Injection. The researchers demonstrated that it is possible to attain red, green and blue emissions originating from just one GaN LED-structure that uses doping with a single type of rare earth ion, Europium (Eu).

NCTU researchers use ALD passivation layers to boost the efficiency of Micro-LEDs by over 140%

Researchers from the National Chiao Tung University (NCTU) in Taiwan has been able to enhance the light-emitting intensity of Micro-LEDs by 143.7% by using ALD passivation layers. The researchers used ALD equipment produced by Finland-based Picosun.

Picosun says that its Micro-LED technology has "immense potential" to dirupt the solid state lighting market, and its ALD solutions has been proven to dramatically boost the efficiency of Micro-LEDs.

VerLASE Technologies announces new technologies for massively parallel assembly of microLED dies and films

VerLASE logoUS-based VerLASE Technologies announced that it is developing technologies for massively parallel assembly of microLED dies or films. The company has already files for multiple patents for its new technology.

VerLASE says that it is using practical methods and well-proven semiconductor and MEMs industry methods and existing tools. The company's technology will enable "deterministic, massively parallel transfers of microdie, with provisions that allow selective repair". The methods involve techniques used daily in Ink-Jet Printing but is not printing per se.

Foxconn may produce MicroLED displays or modules at its Wiscon fab in the future

Taiwan-based Foxconn is building a display production fab in Wisconsin, USA. Announced in 2017, the fab changed its designation a few times (from LCD display panel production, to R&D and finally to LCD module production).

Foxconn production line photo

Foxconn now announced that it may also add OLED and Micro-LED production lines in the Wisconsin factory. It did not disclose any more details or timeline, this is certainly not a commitment yet, it's not even clear if the plan is to produce MicroLED panels or assemble modules.

MagnaChip to develop driver ICs for MicroLED TVs

MagnaChip logoKorea-based driver IC developer MagnaChip announced its latest 28-nm process, and the company said that it is now starting to develop driver ICs for Micro-LED TVs.

This is just an early announcement, hopefully the company will give more details in the future about its MicroLED driver program. For OLED displays, the company says it is currently using the world's most advanced process and has already secured its first 28 nm design win with a leading smartphone maker.

Sony to install a 16K 19 meters long Cledis microled display at Shiseido's Yokohama R&D center

Sony is set to install the world's largest micro-LED display - 16K (15360x3840) 19.2 x 5.4 meters "CLEDIS" panel that was installed at Shiseido new research center in Yokohama, Japan.

Sony 16K 5x19 meter Cledis microled display at Shiseido, Yokohama photo

Sony is also creating its own 16K content specifically for this display, using a method it call “demosaicing” to create “quad ultra-high definition” footage.

The US and China are leading the Micro-LED industry patent landscape

The Korea Intellectual Property Office released a report on the Micro LED industry IP situation - in which it says that Korean display companies may lose their current industry lead as they account for less than 15% of all micro LED display patent applications.

The leading countries in Micro-LED IP are China and the United States - which together account for more than 50% of all applications.

Plessey developed its process to produce native GaN-on-Si green micro-LEDs

UK-based GaN-on-Si MicroLED developer Plessey Semiconductor developed its proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process to emit Green light without the need for color conversion techniques.

Plessey native GaN-on-Si green micro LEDs photo

Plessey says that its native Green LEDs are formed inherently using its proprietary GaN-on-Si epitaxial growth process similar to the native Blue LEDs with the principal difference coming in the amount of indium that is incorporated in the quantum well structures of the LED. The native Green emission is orders of magnitude times brighter than color-converted process for micro-LEDs.

A new design boosts the brightness of UV GaN nanowire LEDs five fold

Researchers from the US National Institute of Standards and Technology (NIST) developed new GaN nanowire-based ultraviolet LEDs that are five times as bright as regular LEDs. The new design uses a silicon-doped GaN nanowire core coated with a shell made from magnesium-doped GaN and Aluminum.

Aluminum nanowire GaN UV LED (NIST)

The nanowires are built in a p-i-n structure and the researcher say that adding the Aluminum to the shell of the LED helps confine electrons to the nanowire core by introducing an asymmetry in the electrical current which boost the electroluminescence of the device.