US-based Ingantec announced an exclusive licensing agreement with the Wisconsin Alumni Research Foundation (WARF), for its patents in advanced strain engineering and the utilization of pseudo-substrates—technologies.
Ingantec says that the licensed IP, developed by University of Wisconsin-Madison Professors Shubhra Pasayat and Chirag Gupta, utilizes porosification and electrochemical etching techniques to create strain-relaxed Indium Gallium Nitride (InGaN) templates. Inagntec says that these methods may hold promises for solving the “green gap” problem —the precipitous drop in efficiency as InGaN based microLEDs move from blue to green and red.
In 2024, Ingantec has entered into an exclusive patent licensing agreement with the University of California Santa Barbara (UCSB), acquiring the exclusive rights to patents that cover innovative systems and methods for achieving industry-leading devices using MOCVD as well as other growth and fabrication processes.
