US-based Ingantec announced that it has licensed a portfolio of patents and pending patents from Yale University, 20 issued patents and filings, covering key innovations in III-nitride optoelectronic devices, methods, and manufacturing processes.
The patents and IP include epitaxial growth and electrochemical etching techniques that utilize nanoporous GaN layers for advanced lattice strain engineering. Ingantec says that these technologies provide novel approaches for controlling material properties in GaN and related semiconductor alloys, with the potential to improve electrical, optical, and structural performance.
Some of the technologies in the patest are listed below:
- Lateral electrochemical etching of III-nitride materials for microfabrication
- Conductivity based on selective etch for GaN devices and applications thereof
- Structures for in-situ reflectance measurement during homo-epitaxy
- Optoelectronic device and method for manufacturing the same
- Porous III-nitrides and methods of using and making thereof
- Method to make buried, highly conductive p-type III-nitride layers
Inagntec explains that nanoporous GaN structures offer a unique pathway for strain management, defect reduction, and improved light extraction efficiency in InGaN-based semiconductor materials. Effective strain engineering is a critical challenge in the development of high-efficiency native red InGaN emitters. Consequently, these newly licensed technologies are vital to the fabrication of high-performance microLED displays and arrays for next-generation augmented reality (AR), medical diagnostics, and data center communication applications.
Last month we reported that Ingantec announced an exclusive licensing agreement with the Wisconsin Alumni Research Foundation (WARF), for its patents in advanced strain engineering and the utilization of pseudo-substrates—technologies. In 2024, Ingantec has entered into an exclusive patent licensing agreement with the University of California Santa Barbara (UCSB), acquiring the exclusive rights to patents that cover innovative systems and methods for achieving industry-leading devices using MOCVD as well as other growth and fabrication processes.
