China-based GaN epiwafer producer Enkris announced that it has developed 8 and 12-inch GaN on silicon microLED light-source products, achieving a 3dB bandwidth of 1.6GHz at a current density of 500A/cm2. The company says that the power consumption of its microLED light source can be below 1pJ/bit.
Enkris says it has optimized the epitaxial structures, material qualities, defects in the active region, and device design, to optimize its microLED epiwafer for optical I/O solutions. By effectively suppressing the quantum-confined Stark effect (QCSE) in the quantum wells, the carrier recombination rate is significantly enhanced. In addition, the active region area has been reduced to lower device capacitance and minimize RC delay issues.
Enkris is collaborating with professor Lu Shulong's research group at Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences.
