ALLOS Semiconductors - Page 2

Today we are happy and proud to announce a new MicroLED Industry Association, created to help accelerate the adoption of microLED display technologies.

The new association will bring together companies, academia and organizations active in the MicroLED industry and provide an ideal forum for solving common technology issues, fostering cooperation and sharing relevant information, resources and tools. The association will also work to promote its member companies, their technologies and products.

You can read more about the MicroLED Industry Association, including the complete list of member benefits, here: https://www.microledassociation.com

This page is still at an early stage, and we are working on a new design which will be updated shortly.

GaN-on-Si IP developer ALLOS Semiconductors announced it is collaborating with with Prof. Ohkawa and his team at King Abdullah University of Science and Technology (KAUST) to develop high efficiency nitride-based red LEDs on large diameter silicon substrates.

Prof. Ohkawa and team have developed an indium gallium nitride (InGaN)- based red LED stack with low forward voltage of less than 2.5 V and high efficiency by using local strain compensation and a modified MOCVD reactor design. ALLOS and the KAUST team will combine their unique technologies to handle strain and optimize crystal growth conditions for GaN-on-Si and red LEDs. To this end, the KAUST team will grow its red LED stack on top of ALLOS's GaN-on-Si-buffer layers, which will be fine-tuned during the collaboration to optimize the performance of KAUST's red LED stack.

German-based GaN-on-Si developer ALLOS announced that it has sold its high-power electronics and RF business to AZUR SPACE. ALLOS will now focus its business on the microLED display market.

ALLOS Semiconductors developed its GaN-on-Si epiwafer technology for both high power electronics and Micro LED applications, but the time has come to focus on one market. The company says its 200 and 300 mm epiwafer technology is crucial in meeting the uniformity, crystal quality and manufacturability requirements of the novel Micro LED display applications.

German-based GaN-on-Si developer ALLOS has applied its technology to large 300 mm epiwafers. ALLOS says that scaling up to 300 mm wafers enables higher production efficiencies and thus lower costs. ALLOS estimates that the higher area utilization alone accounts for a cost advantage of 40% compared to standard LED wafers. Standard 300 mm silicon line tools also offer higher production uniformity and yield.

ALLOS demonstrated the 300 mm scale-up using a reactor made by Veeco who announced selling the first 300 mm GaN reactor to a leading-edge semiconductor fab just some month ago and also showed 300 mm wafer data at CES. ALLOS reports a wavelength uniformity of consistently below 1 nm and "all other production requirements like bow of

In November 2017 Veeco and ALLOS Semiconductors announced that the two companies have completed their micro-LED strategic initiative and demonstrated 200mm GaN-on-Si wafers for blue and green micro-LED production. ALLOS proprietary epitaxy technology was transferred onto Veeco's Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

Yesterday ALLOS and Veeco announced the completion of another phase of their mutual effort to provide the industry with leading GaN-on-Silicon epiwafer technology for microLED production. The two companies now demonstrated the reproducibility of ALLOS’ 200 mm GaN-on-Si epiwafer technology on Veeco’s Propel MOCVD reactor when producing epiwafers for many prominent global consumer electronics companies.

Veeco and ALLOS Semiconductors have completed their micro-LED strategic initiative and demonstrated 200mm GaN-on-Si wafers for blue and green micro-LED production. Veeco transferred ALLOS' proprietary epitaxy technology onto Veeco's Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

ALLOS says that it now has an MOCVD technology that is capable of high yielding GaN Epitaxy that meets all the requirements for processing micro-LED devices in 200 millimeter silicon production lines. Within one month the two companies managed to establish the ALLOS technology on Veeco's Propel systems and have achieved crack-free, meltback-free wafers with less than 30 micrometers bow, high crystal quality, superior thickness uniformity and wavelength uniformity of less than one nanometer.