ALLOS Semiconductors announced a strategic partnership with Ennostar Corporation, to bring bring 200 mm GaN-on-Si microLED epiwafers into volume production.
This partnership will enable ALLOS to offer its customers GaN-on-Si epiwafers at mass volume. This basically means that Ennostar has become ALLOS manufacturing partner, while ALLOS operates in a "fabless" model. In addition to manufacturing, Ennostar will also contribute its advanced LED-related technologies to further enhance the product performance.
ALLOS says that its new epiwafer products are engineered to meet the stringent requirements of microLED applications, including uniformity, elimination of micro-defects, and optimized driving currents. Designed for compatibility with standard silicon fabs, the epiwafers are available in a thickness of 725 µm and conform to silicon industry cleanliness and contamination standards. The company says that the new GaN-on-Si LED epiwafers deliver brightness and energy efficiency on par with conventional GaN-on-sapphire solutions.
In addition to the currently-available 200 mm wafers, the partnership also paves the way for 300 mm GaN-on-Si LED epiwafers, enabling efficient integration with 300 mm logic wafers.
